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 D44H Series (NPN), D45H Series (PNP)
Preferred Devices
Complementary Silicon Power Transistors
These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
Features http://onsemi.com
* Low Collector-Emitter Saturation Voltage * Fast Switching Speeds * Complementary Pairs Simplifies Designs * Pb-Free Packages are Available*
MAXIMUM RATINGS
Rating Collector-Emitter Voltage D44H8, D45H8 D44H11, D45H11 Emitter Base Voltage Collector Current - Continuous - Peak (Note 1) Total Power Dissipation @ TC = 25C @ TA = 25C Operating and Storage Junction Temperature Range Symbol VCEO 60 80 VEB IC 10 20 PD 70 2.0 TJ, Tstg -55 to +150 C W 5.0 Vdc Adc Value Unit Vdc
10 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
4
VCE(sat) = 1.0 V (Max) @ 8.0 A
MARKING DIAGRAM
1
TO-220AB CASE 221A-09 STYLE 1 2 3
D4xHyyG AYWW
D4xHyy = Device Code x = 4 or 5 yy = 8 or 11 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package
ORDERING INFORMATION
Device Package TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Symbol RqJC RqJA TL Max 1.8 62.5 275 Unit _C/W _C/W _C
D44H8 D44H8G D44H11 D44H11G D45H8 D45H8G D45H11 D45H11G
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Width v 6.0 ms, Duty Cycle v 50%.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
Preferred devices are recommended choices for future use and best overall value.
1
February, 2006 - Rev. 9
Publication Order Number: D44H/D
II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II I I IIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII
SWITCHING TIMES DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Fall Time (IC = 5.0 Adc, IB1 = 102 = 0.5 Adc)
Storage Time (IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc)
Delay and Rise Times (IC = 5.0 Adc, IB1 = 0.5 Adc)
Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
Collector Capacitance (VCB = 10 Vdc, ftest = 1.0 MHz)
Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.8 Adc)
Collector-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.4 Adc)
Emitter Cutoff Current (VEB = 5.0 Vdc)
Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)
Collector-Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0 Adc)
DC Current Gain (VCE = 1.0 Vdc, IC = 2.0 Adc) (VCE = 1.0 Vdc, IC = 4.0 Adc)
Characteristic
D44H Series (NPN),
D44H8, D45H8 D44H11, D45H11
http://onsemi.com
D44H Series D45H Series D44H Series D45H Series D44H Series D45H Series D44H Series D45H Series D44H Series D45H Series VCEO(sus) Symbol VCE(sat) VBE(sat) td + tr IEBO ICES hFE Ccb fT ts tf Min 60 40 60 80 - - - - - - - - - - - - - - Typ 90 160 140 100 500 500 300 135 50 40 - - - - - - - - Max 1.5 1.0 10 10 - - - - - - - - - - - - - - MHz Unit Vdc Vdc Vdc mA mA pF ns ns ns -
2
D44H Series (NPN),
1000 VCE = 1 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 25C 125C -40C 100 1000 VCE = 1 V
125C 25C 100 -40C
10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS)
10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS)
Figure 1. D44H11 DC Current Gain
Figure 2. D45H11 DC Current Gain
1000 VCE = 5 V hFE, DC CURRENT GAIN 25C 125C
1000 VCE = 5 V hFE, DC CURRENT GAIN
125C 25C 100 -40C
100
-40C
10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS)
10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS)
Figure 3. D44H11 DC Current Gain
Figure 4. D45H11 DC Current Gain
0.40 SATURATION VOLTAGE (VOLTS) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 25C 125C -40C SATURATION VOLTAGE (VOLTS) VCE(sat) @ IC/IB = 10
0.6 VCE(sat) @ IC/IB = 10 0.5 0.4 -40C 0.3 25C 0.2 0.1 0 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 125C
Figure 5. D44H11 ON-Voltage
Figure 6. D45H11 ON-Voltage
http://onsemi.com
3
D44H Series (NPN),
1.2 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 1.0 0.8 0.6 25C 0.4 0.2 0 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 -40C 1.4 1.2 1.0 0.8 0.6 25C 0.4 0.2 0 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 VBE(sat) @ IC/IB = 10 -40C
125C
125C
Figure 7. D44H11 ON-Voltage
Figure 8. D45H11 ON-Voltage
IC, COLLECTOR CURRENT (AMPS)
100 50 30 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) D44H/45H8 D44H/45H10,11 PD, POWER DISSIPATION (WATTS)
TA TC
1.0 ms
100 ms 10 ms
3.0 60
2.0 40 TC 1.0 20 TA
TC 70 C dc DUTY CYCLE 50%
1.0 ms
0
0 0 20 40 60 80 100 120 T, TEMPERATURE (C) 140 160
Figure 9. Maximum Rated Forward Bias Safe Operating Area
Figure 10. Power Derating
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01
D = 0.5
0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 ZqJC(t) = r(t) RqJC RqJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 5.0 10 20 50 P(pk)
t1
t2
DUTY CYCLE, D = t1/t2 100 200 500 1.0 k
t, TIME (ms)
Figure 11. Thermal Response
http://onsemi.com
4
D44H Series (NPN),
PACKAGE DIMENSIONS
TO-220 CASE 221A-09 ISSUE AA
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
-T- B
4
SEATING PLANE
F T S
C
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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5
D44H/D


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